Staff Researcher - Selective area deposition by atomic layer deposition for microelectronics Staff Researcher - Selective area deposition by atomic layer deposition for microelectronicsJob Reference: Ref.04.24.23Employer: International Iberian Nanotechnology Laboratory (INL)Group/Unit: Nanofabrication, Optoelectronics and Energy ApplicationsNumber of Vacancies: 1Employment Type: Full timeContract Duration: 36 monthsOpen Date for Applications: May 13 th , 2024Closing Date for Applications : June 12 th , 2024 , 23h00m (Lisbon Time)Key words: # Atomic LayerDeposition ( ALD) # SelectiveAreaDeposition (SAD) # surface characteri sation #nanofabricationOverviewThe Nanofabrication, Optoelectronics, and Energy Applications R esearch Group is dedicated to developing nanofabrication and applications for optoelectronics and energy . Focused on developing nanofabrication solutions for a diverse set of applications, via several mechanisms such as competitive funding p rojects and industrial services. T he group aims to keep advancing the state-of-the-art in several areas .We are looking for a qualified Researcher to join our team in developing area selective deposition (SAD) based on atomic layer deposition (ALD) process es. We will develop work in collaboration with a multinational semiconductor company with the aim of developing clean room nanofabrication processes compatible with the mid-term industry needs in the area of microelectronics .The three-year project consists of the procurement and installation of a ALD tool tailored for SAD and the development of nanometre scale process es that are compatible with advanced micro-electronics high end fabrication. T his project will place the researcher and INL in a unique position worldwide allowing for the developed processes to be implemented by the industrial partner in several applications.Job DutiesT he job duties will be the following :Experimental Design and Execution: Develop experimental strategies and protocols for selective area deposition using ALD, considering parameters such as substrate material, surface preparation, precursor ch oice, and deposition conditions;Execute experiments meticulously, ensuring reproducibility and accuracy in results.Process Optimis ation: Optimis e ALD processes for selective area deposition, aiming for precise control over film thickness, uniformity, an d conformity on targeted areas;Explore parameter space systematically, employing techniques such as Design of Experiments (DOE) to identify optimal process conditions.Characteri s ation and Analysis : P erform comprehensive characteris ation of deposited films using techniques such as ellipsometry , X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and scan ning electron microscopy (SEM);Analyse data to assess film quality, uniformity, adhesion, and other relevant properties.Collaboration and Communication : Collaborate closely with internal and external partners to understand project goals, requirements, and timelines ;Communicate research findings effectively through reports, presentations, and meetings, ensuring alignment between project objectives and experimental outcomes.Mandatory QualificationsEducationPhD in Physics, Chemistry, Materials Science or related areas .Experience4 years Postdoctoral or industry experience in the field of atomic layer deposition and/or area selective deposition ;Track record of conducting and publishing research in peer-reviewed journals related to ALD and area-selective deposition.Technical SkillsHands-on experience with atomic la yer deposition (ALD) techniques;Proficiency in area-selective depositi on methodologies and techniques;Knowledge of surface chemistry and material characteris a tion techniques relevant to ALD;Experience with equipment and tools used in ALD processes;Familiarity with emerging trends and advancements in ALD and area-selective deposition ;Understanding of industry standards, regulations, and practices related to ALD and area-selective deposition.Other SkillsAbility to design and execute experiments, analy s e data, and interpret results;Experience in managing research projects, including pla nning, budgeting, and reporting;Ability to mentor and supervise junior researchers, students, or technicians.P referred QualificationsPrevious experience working in the semiconductor, microele ctronics, or related industries;Experience in collaborating with academic and industrial partners on research projects ;Active participation in conferences, workshops, and seminars related to ALD and area-selective deposition.Personal SkillsAbility to work independently as well as part of a multidisciplinary team;Attention to detail and a commi tment to quality and excellence;Strong proble m-solving and analytical skills;Excellent communication skills, both written and verbal;" Hands-on" approach together with a high commitment in respecting working deadlines;Customer orient ation .Tax benefits and other Diplomatic privileges;Private health i nsurance;F amily allowance s (according to family situation);Free nursery service at INL premises (subject to availability);Support for e ducation fees of dependent children;Relocation support;30 working days o f annual leave.How to ApplyThe application must be in English and include the following mandatory documents :c) Academic and/or Professional diplomasOnline application instructions:The application is made online by clicking the "Apply " button below;The candidate must complete all required sections of the online application form ;The candidate must submit the m andatory documents mentioned above in pdf format by including them in the "A dditional files" sectio n using the "Add portfolio" button.Incomplete applications including the failure to provide mandatory documents or providing inaccurate information will result in the application not being considered.How the Selection P rocess worksA. Applications e ligibility checkThis stage will be carried out on the basis of the mandatory requirements, education, experience and techn ical skills defined for the job, as well as the validation of the mandatory documents. Only candidates who meet the eligibility criteria will move forward to t he next stage .B. CV AssessmentT he Selection Committee will evaluate the eligible applications based on their CV and other submitted documents and the suitability for the position. The best ranked candidates will be shortlisted for the interview stage(s).C. Interview(s)The interview(s) may be done in different formats: video recording , online or onsite.The question based interview will evaluat e the match between the candid ate's profile and the requirements for the position, including the technical and personal skills. To better support this stage, the candidate may be requested to prepare a short presentation.D. NominationThe selected candidate will be nominated and formally offered the position, including the disclosure of the contractual conditions.Additional InformationWe highly value your interest in becoming part of the INL experience and it is important for us to maintain good c ommunications with all candidate s. No matter the outcome of your application, we will always provide you with feedback .Equal Opportunity and Non-Discrimination PrincipleINL follows a non-discri mination and equal access principle , wherefore no candidate can be privileged, benefited, impaired or deprived of any rights whatsoever, or be exempt of and duties based on any possible discriminatory issues.The advertisement deadline may be extended at any time without previous notice in order to improve the suitability and effectiveness of the recruitment process.About INLThe International Iberian Nanotechnology Laboratory – INL ( http://www.inl.int ), is the first and only Intergovernmental Organisation in the world entirely focused on Nanoscience and Nanotechnology.It was founded under an international legal framework to perform interdisciplinary research, deploy and communicate nanotechnology for the benefit of society. INL aims to be a recognised leading global nanotechnology innovation hub.#J-18808-Ljbffr
